MTW6N100E - TMOS POWER FET

Motorola Semiconductor (now NXP Semiconductors)

Key Features

it loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 7000 6000 C,.

MTW6N100E tmos power fet by Motorola Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MTW6N100E
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	167.51 KB
Description	TMOS POWER FET
Datasheet	MTW6N100E Datasheet

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Full PDF Text Transcription (Reference)

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW6N100E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 With Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high www.DataSheet4U.