MTW23N25E Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW23N25E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N- Channel Enhancement- Mode Silicon Gate This advanced TMOS E- FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits .. where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. - Avalanche Energy Specified - Source- to- Drain Diode Recovery Time parable to a Discrete Fast Recovery Diode - Diode is Characterized for Use in Bridge Circuits - IDSS and VDS(on) Specified at Elevated Temperature - Isolated Mounting Hole Reduces Mounting Hardware ™ Data Sheet Motorola Preferred Device TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM ® CASE 340K- 01, Style 1 TO- 247AE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain- Source Voltage Drain- Gate Voltage (RGS = 1.0 MΩ) Gate- Source Voltage - Continuous Gate- Source Voltage - Non- Repetitive (tp ≤ 10 ms) Drain Current - Continuous Drain Current - Continuous @ 100°C Drain Current - Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain- to- Source Avalanche Energy - Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL = 20 Apk, L = 3.0 m H, RG = 25 Ω) Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS 600 RθJC RθJA TL 0.70 40 260 °C/W °C Value 250 250 ± 20 ± 40 23 18 69 180 1.43 - 55 to 150 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C m...