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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Designer's
TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits www.DataSheet4U.com where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTW23N25E Datasheet
