| Part number | MTP3N120E |
|---|---|
| Datasheet | MTP3N120E_Motorola.pdf |
| File Size | 200.62 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET 3.0 AMPERES 1000 VOLTS |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N120E/D Designer's Data Sheet .. TMOS E-FET .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain to source diode with fast recovery time.
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTP3N100 | Power MOSFET |
| MTP3N100E | TMOS POWER FET 3.0 AMPERES 1000 VOLTS |
| MTP3N25E | TMOS POWER FET 3.0 AMPERES 250 VOLTS |
| MTP3N50 | Power Field Effect Transistor |
| MTP3N50E | TMOS POWER FET |
| MTP3N55 | Power Field Effect Transistor |
| MTP3N60 | Power Field Effect Transistor |
| MTP3N75 | Power Field Effect Transistor |
| MTP3N80 | Power Field Effect Transistor |
| MTP3N95 | Power MOSFET |
