MTD8N06E datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MTD8N06E |
|---|---|
| Datasheet | MTD8N06E_Motorola.pdf |
| File Size | 173.09 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD8N06E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high...
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTD10N05E | TMOS4 POWER FET |
| MTD12N06EZL | High Energy Power FET DPAK |
| MTD1302 | TMOS POWER FET |
| MTD15N06V | TMOS POWER FET |
| MTD15N06VL | TMOS POWER FET |
| MTD1N40 | POWER FIELD EFFECT TRANSISTOR |
| MTD1N50E | TMOS POWER FET |
| MTD1N60E | TMOS POWER FET |
| MTD1N80E | TMOS POWER FET |
| MTD1P50E | TMOS POWER FET |
