The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTD8N06E/D
Designer's
TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected www.DataSheet4U.com voltage transients.
MTD8N06E Datasheet
