MTD8N06E
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTD8N06E/D
Designer's
TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N- Channel Enhancement- Mode Silicon Gate
This advanced TMOS E- FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected .. voltage transients.
- Avalanche Energy Specified
- Source- to- Drain Diode Recovery Time parable to a Discrete Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- Surface Mount Package Available in 16 mm, 13- inch/2500 Unit Tape & Reel, Add...
