MSA1022-CT1 Datasheet | Motorola Semiconductor

.. SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by MSA1022- CT1/D PNP RF Amplifier Transistor Surface Mount COLLECTOR 3 Motorola Preferred Device 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS (TA = 25°C) Rating Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current - Continuous Symbol VCBO VCEO VEBO IC Value - 30 - 20 - 5.0 - 30 Unit Vdc Vdc Vdc m Adc CASE 318D- 03, STYLE 1 SC- 59 THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 - 55 ~ +150 Unit m W °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Collector Cutoff Current (VCB = - 10 Vdc, IE = 0) Collector- Emitter Breakdown Voltage (VCE = - 20 Vdc, IB = 0) Emitter- Base Breakdown Voltage (VEB = - 5.0 Vdc, IC = 0) DC Current Gain(1) (VCE = - 10 Vdc, IC = - 1.0 m Adc) Current- Gain - Bandwidth Product (VCB = - 10 Vdc, IE = 1.0 m Adc) 1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%. Symbol ICBO ICEO IEBO h FE f T Min - -...