MRF9135L
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Sub- Micron MOSFET Line
RF Power Field Effect Transistors
N- Channel Enhancement- Mode Lateral MOSFETs
Designed for broadband mercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, mon- source amplifier applications in 26 volt base station equipment.
- Typical N- CDMA Performance @ 880 MHz, 26 Volts, IDQ = 1100 m A IS- 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power
- 25 Watts Avg. Power Gain
- 17.8 d B Efficiency
- 25% Adjacent Channel Power
- 750 k Hz:
- 47 d Bc @ 30 k Hz BW
- Internally Matched, for Ease of Use ..
- High Gain, High Efficiency and High Linearity
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase Flatness
- Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 135 Watts CW Output Power
- Excellent Thermal Stability
- Characterized with Series...
