| Part number | MRF9130LR3 |
|---|---|
| Datasheet | MRF9130LR3_Motorola.pdf |
| File Size | 584.47 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | 28 V LATERAL N-CHANNEL RF POWER MOSFETs |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9130L/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large - signal, mon - source amplifier applications in 28 volt base station...
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRF9130LSR3 | 28 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9135L | 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9135LR3 | 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9135LSR3 | 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9100 | 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9100R3 | 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9100SR3 | 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF911 | HIGH FREQUENCY TRANSISTOR |
| MRF912 | HIGH FREQUENCY TRANSISTOR |
| MRF9120LR3 | 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
