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MRF9100 - 26 V LATERAL N-CHANNEL RF POWER MOSFETs

Description

22 pF, 100B Chip Capacitors, ATC #100B220GW 2.2 pF, 100B Chip Capacitors, ATC #100B2R2BW 6.8 pF, 100B Chip Capacitor, ATC #100B6R8CW 10 pF, 100B Chip Capacitors, ATC #100B100GW 33 pF, 100B Chip Capacitors, ATC #100B330JW 4.7 pF, 100B Chip Capacitors, ATC #100B4R7BW 2.7 pF, 100B Chip Capacitor, ATC #

Features

  • in, output power, drain efficiency and intermodulation distortion. Input Matching Network Device Under Test Output Matching Network Z in Z.
  • OL Figure 11. Series Equivalent Input and Output Impedance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9100/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 26 volt base station equipment. • On–Die Integrated Input Match • Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts Output Power, P1dB — 110 Watts (Typ) Power Gain @ P1dB — 16.5 dB (Typ) Efficiency @ P1dB — 53% (Typ) • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness www.DataSheet4U.
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