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MRF9080SR3 - RF POWER FIELD EFFECT TRANSISTORS

Download the MRF9080SR3 datasheet PDF. This datasheet also covers the MRF9080 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Description

4.7 pF Chip Capacitor, B Case 2.7 pF Chip Capacitor, B Case 1.5 pF Chip Capacitor, B Case 5.6 pF Chip Capacitors, B Case 22 pF Chip Capacitors, B Case 10 µF, 35 V Tantalum Chip Capacitors 10 pF Chip Capacitors, B Case 0.8 pF Chip Capacitor, B Case 8.2 pF Chip Capacitor, B Case 1.0 kΩ, ???

Features

  • F9080SR3 MRF9080LSR3 9 NOTES www. datasheet4u. com MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 10.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF9080_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF9080LR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF9080LSR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF9002NR2 RF Power FET Freescale Semiconductor
MRF9002R2 RF Power Field Effect Transistor Array Motorola Inc
MRF901 NPN SILICON RF TRANSISTOR ASI

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF9080 RF POWER FIELD EFFECT TRANSISTORS
MRF9080LSR3 RF POWER FIELD EFFECT TRANSISTORS
MRF9080R3 RF POWER FIELD EFFECT TRANSISTORS
MRF9085 RF POWER MOSFETs
MRF9085LR3 RF POWER MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9080/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance www.datasheet4u.com of these devices make them ideal for large–signal, common– source amplifier applications in 26 volt base station equipment. • Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.
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