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MRF9030LSR1 - RF Power Field Effect Transistors

Download the MRF9030LSR1 datasheet PDF. This datasheet also covers the MRF9030LR1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • st Output Matching Network Z source Z load Figure 9. Series Equivalent Input and Output Impedance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF9030LR1_Motorola.pdf) that lists specifications for multiple related part numbers.

More Datasheets from Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF9030LR1 RF Power Field Effect Transistors
MRF9030R1 RF POWER FIELD EFFECT TRANSISTORS
MRF9030SR1 RF POWER FIELD EFFECT TRANSISTORS
MRF901 NPN Silicon High-Frequency Transistor
MRF9011 NPN Silicon High-Frequency Transistor
MRF9011L NPN Silicon High-Frequency Transistor
MRF9011LT1 NPN Silicon High-Frequency Transistor
MRF904 HIGH FREQUENCY TRANSISTOR
MRF905 RF OSCILLATOR TRANSISTOR
MRF9060 RF Power Field Effect Transistors

Full PDF Text Transcription for MRF9030LSR1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MRF9030LSR1. For precise diagrams, tables, and layout, please refer to the original PDF.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9030/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 19 dB Efficiency — 41.5% IMD — - 32.