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MRF9030LR1 - RF Power Field Effect Transistors

Key Features

  • st Output Matching Network Z source Z load Figure 9. Series Equivalent Input and Output Impedance.

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Brand Logo Part Number Description Manufacturer
Freescale Semiconductor Logo MRF9030LR1 RF Power Field Effect Transistor Freescale Semiconductor

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Full PDF Text Transcription for MRF9030LR1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MRF9030LR1. For precise diagrams, tables, and layout, please refer to the original PDF.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9030/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 19 dB Efficiency — 41.5% IMD — - 32.