MRF9011LT1 - NPN Silicon High-Frequency Transistor

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	MRF9011LT1
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	266.88 KB
Description	NPN Silicon High-Frequency Transistor
Datasheet	MRF9011LT1 Datasheet

More Datasheets from Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
MRF9011L	NPN Silicon High-Frequency Transistor
MRF9011	NPN Silicon High-Frequency Transistor
MRF901	NPN Silicon High-Frequency Transistor
MRF9030LR1	RF Power Field Effect Transistors
MRF9030LSR1	RF Power Field Effect Transistors
MRF9030R1	RF POWER FIELD EFFECT TRANSISTORS
MRF9030SR1	RF POWER FIELD EFFECT TRANSISTORS
MRF904	HIGH FREQUENCY TRANSISTOR
MRF905	RF OSCILLATOR TRANSISTOR
MRF9060	RF Power Field Effect Transistors

Full PDF Text Transcription for MRF9011LT1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MRF9011LT1. For precise diagrams, tables, and layout, please refer to the original PDF.

View original datasheet text

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR901LT1/D The RF Line NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. • High Current–Gain — Bandwidth Product • Low Noise Figure @ f = 1.0 GHz — NF(matched) = 1.8 dB (Typ) (MRF9011LT1) NF(matched) = 1.9 dB (Typ) (MMBR901LT1, T3) • High Power Gain — Gpe(matched) = 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1) Gpe(matched) = 12.0 dB (Typ) @ f = 1.