MRF8S26120HSR3 transistor equivalent, rf power field effect transistor.
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
with frequencies from 2620 to 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modula.
22 μF, 35 V Tantalum Capacitor 330 nF, 100 V Chip Capacitor 15 nF, 100 V Chip Capacitor 2.2 μF, 100 V Chip Capacitors 22 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 27 pF Chip Capacitors 0.8 pF Chip Capacitor 1 kΩ, 1/4 W Chip Resist.
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