MRF629 - HIGH FREQUENCY TRANSISTOR

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	MRF629
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	63.96 KB
Description	HIGH FREQUENCY TRANSISTOR
Datasheet	MRF629 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MRF629 CASE 79-03, STYLE 5 HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Tc = 25°C Derate above 25°C Storage Temperature Symbol v CEO VCBO VEBO "c PD Tstg Value 16 36 4.0 400 5.0 50 -65 to +200 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 50 mAdc, Ib = 0) Collector-Emitter Breakdown Voltage C(l = 50 mAdc, V B e = 0) Emitter-Base Breakdown Voltage E(l = 1.0 mAdc, Iq = 0) Collector Cutoff Current (VC B = 15 Vdc, El = 0) ON CHARACTERISTICS DC Current Gain (lC = 100 mAdc, Vce = 5.