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MRF525
CASE 79-03, STYLE 5
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
f
MAXIMUM RATINGS
Rating Collector-Emitter Voltage RgE = 330 ft Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation TA = 50°C
Derate above 50°C Junction Temperature Storage Temperature
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Symbol VCER vCBO v EBO '
'C
PD
Tj T stq
Value 25 35
3.5 150 2.5 0.017
+ 175 - 65 to + 200
Unit Vdc Vdc Vdc
mAdc
Watts W/°C
°C °C
Symbol R 0JC
Max
60
Unit °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage flC = 5.0 mAdc, Bl = 0!
Collector-Emitter Breakdown Voltage Oc = 5.
MRF525 Datasheet
