MRF402 - HIGH FREQUENCY TRANSISTOR

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	MRF402
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	39.13 KB
Description	HIGH FREQUENCY TRANSISTOR
Datasheet	MRF402 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MRF403	Half-Inch Diameter Process Sealed Rotaries	NKK
MRF406	NPN SILICON RF POWER TRANSISTOR	Advanced Semiconductor
MRF410	NPN Bipolar RF power transistor	eleflow
MRF421	The RF Line NPN Silicon RF Power Transistor	Tyco Electronics
MRF422	The RF Line NPN Silicon RF Power Transistor	Tyco Electronics

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
MRF401	RF POWER TRANSISTORS
MRF412	RF POWER TRANSISTOR
MRF421	RF POWER TRANSISTORS
MRF422	RF POWER TRANSISTORS
MRF426	RF POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MRF402 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation T& = 25°C Derate above 25°C Storage Temperature Symbol VCEO VCBO v EBO "C PD • Tstg Value 18 36 4.0 0.5 1.0 5.62 -65 to +200 Unit Vdc Vdc Vdc Adc Watts mW/°C °C CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON ff ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted. Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 100 mAdc, Ib = 0) Collector-Emitter Breakdown Voltage dC = 100 mAdc, Vbe = 0) Emitter-Base Breakdown Voltage (lg = 0.25 mAdc, lc = 0) Collector Cutoff Current (Vcb = 15 Vdc, Ie = 0) ON CHARACTERISTICS DC Current Gain dC = 250 mAdc, Vce = 5.