MRF373ASR1
MRF373ASR1 is RF Power Field Effect Transistors manufactured by Motorola Semiconductor.
- Part of the MRF373AR1 comparator family.
- Part of the MRF373AR1 comparator family.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF373A/D
The RF MOSFET Line
RF Power Field Effect Transistors
N- Channel Enhancement- Mode Lateral MOSFETs
Designed for broadband mercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, mon source amplifier applications in 28/32 volt transmitter equipment.
- Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture Output Power
- 75 Watts Power Gain
- 18.2 d B Efficiency
- 60%
- 100% Tested for Load Mismatch Stress at All Phase Angles with 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW
- Integrated ESD Protection
- Excellent Thermal Stability
- Characterized with Series Equivalent Large- Signal Impedance Parameters
- In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
MRF373AR1 MRF373ASR1
- 860 MHz, 75 W, 32 V LATERAL N- CHANNEL BROADBAND RF POWER MOSFETs
CASE 360B- 05, STYLE 1 NI- 360
MRF373AR1
CASE 360C- 05, STYLE 1 NI- 360S
MAXIMUM RATINGS Rating
Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range Operating Junction Temperature ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model
THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction to Case
MRF373AR1 MRF373ASR1
Symbol VDSS VGS...
