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MRF373ASR1 - RF Power Field Effect Transistors

Download the MRF373ASR1 datasheet PDF. This datasheet also covers the MRF373AR1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

18 pF Chip Capacitors, B Case, ATC 12 pF Chip Capacitor, B Case, ATC 1.8 pF Chip Capacitor, B Case, ATC 51 pF Chip Capacitors, B Case, ATC 0.3 pF Chip Capacitor, B Case, ATC (Used only on the MRF373AS) 15 pF Chip Capacitor, B Case, ATC 10 pF Chip Capacitor, B Case, ATC 2.7 pF Chip Capacitor, B Case,

Key Features

  • r product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P. O. Box 5405, Denver, Colorado 80217. 1.
  • 303.
  • 675.
  • 2140 or 1.
  • 800.
  • 441.
  • 2447 JAPAN: Motorola Japan Ltd. ; SPS, Tech.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF373AR1-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF373ALR1 RF Power Field Effect Transistors Motorola Inc
MRF373ALSR1 RF Power Field Effect Transistors Motorola Inc
MRF374 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
MRF374A RF POWER FIELD EFFECT TRANSISTOR Motorola Inc
MRF377 RF Power Field-Effect Transistor NXP

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF373AR1 RF Power Field Effect Transistors
MRF373 The RF MOSFET Line RF Power Field Effect Transistors
MRF373R1 RF Power Field Effect Transistors
MRF373S The RF MOSFET Line RF Power Field Effect Transistors
MRF373SR1 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF373A/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28/32 volt transmitter equipment. • Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture Output Power — 75 Watts Power Gain — 18.