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MRF284S, MRF284 - RF Power Field-Effect Transistors

MRF284S Description

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF284/D The RF Sub *Micron MOSFET Line RF Power Field Ef.

MRF284S Features

* 0 13 IDQ = 400 mA G pe , POWER GAIN (dB) 12 300 mA
* 30 200 mA 11 10 9 100 mA 8 0.1 VDD = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 7. Intermodulation Distortion versus Output Power Figure 8. Power

MRF284S Applications

* at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN
* PCS/cellular radio and wireless local loop.
* Specified Two
* Tone Performance @ 2000 MHz, 26 Volts Output Power = 30 Watts (PE

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MRF284S, MRF284. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MRF284S, MRF284
Manufacturer
Motorola
File Size
132.23 KB
Datasheet
MRF284_Motorola.pdf
Description
RF Power Field-Effect Transistors
Note
This datasheet PDF includes multiple part numbers: MRF284S, MRF284.
Please refer to the document for exact specifications by model.

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Power Field-Effect Transistors Motorola
Motorola MRF284S-like datasheet