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MRF281ZR1 - RF POWER FIELD EFFECT TRANSISTORS

Download the MRF281ZR1 datasheet PDF. This datasheet also covers the MRF281SR1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Features

  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • S--Parameter Characterization at High Bias Levels.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. Document Number: MRF281 Rev. 6, 10/2008 MRF281SR1 MRF281ZR1 1930--1990 MHz, 4 W, 26 V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF281SR1_Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications.
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