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MRF18060ALSR3 - RF POWER FIELD EFFECT TRANSISTORS

Download the MRF18060ALSR3 datasheet PDF. This datasheet also covers the MRF18060A variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Features

  • 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --1.02 --0.76 0.127 REF 0.254 REF 0.381 REF B (FLANGE) 2 2X K D bbb M T A M B M N (LID) R M (LID) ccc M H 3 T A M B M ccc aaa M T A T A M B B M (.

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Note: The manufacturer provides a single datasheet file (MRF18060A_Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18060A/D MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from MRF18060ASR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier The RF MOSFET Line applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. Specified for GSM1805 – 1880 MHz.
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