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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF158/D
The RF TMOS® Line
Power Field Effect Transistor
N–Channel Enhancement Mode
Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 500 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB (Min) Efficiency = 55% (Typ) • Facilitates Manual Gain Control, ALC and Modulation Techniques
To 500 MHz, 2 W, 28 V TMOS BROADBAND RF POWER FET
ARCHIVE INFORMATION
• 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR • Excellent Thermal Stability, Ideally Suited for Class A Operation • Circuit board sample available upon request by contacting RF Tactical Marketing in Tempe, AZ.
MRF158 Datasheet
