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MRF1570T1 - RF Power Field Effect Transistors

Download the MRF1570T1 datasheet PDF. This datasheet also covers the MRF1570FT1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • ICE DATA MRF1570T1 MRF1570FT1 7.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF1570FT1_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF1570FNT1 RF Power Field Effect Transistors Freescale Semiconductor
MRF1570NT1 RF Power Field Effect Transistors Freescale Semiconductor
MRF157 Linear RF Power MOSFET MACOM
MRF157 MOS LINEAR RF POWER FET Tyco Electronics
MRF150 N-CHANNEL MOS LINEAR RF POWER FET Tyco Electronics

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF1570FT1 RF Power Field Effect Transistors
MRF157 MOS LINEAR RF POWER FET
MRF150 N-CHANNEL MOS LINEAR RF POWER FET
MRF1500 MICROWAVE POWER TRANSISTOR
MRF15030 RF POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1570T1/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 470 MHz, 12.5 Volts Output Power — 70 Watts Power Gain — 10 dB Efficiency — 50% • Capable of Handling 20:1 VSWR, @ 15.