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MRF1570FT1 - RF Power Field Effect Transistors

Key Features

  • ICE DATA MRF1570T1 MRF1570FT1 7.

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( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1570T1/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 470 MHz, 12.5 Volts Output Power — 70 Watts Power Gain — 10 dB Efficiency — 50% • Capable of Handling 20:1 VSWR, @ 15.