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MRF1535T1 - RF Power Field Effect Transistors

Download the MRF1535T1 datasheet PDF. This datasheet also covers the MRF1535FT1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Ω 5.0 + j0.9 5.0 + j0.9 3.0 + j1.0 ZOL.
  • Ω 1.7 + j0.2 1.7 + j0.2 1.3 + j0.1 VDD = 12.5 V, IDQ = 500 mA, Pout = 35 W f MHz 450 470 500 520 Zin Ω 0.8.
  • j1.4 0.9.
  • j1.4 1.0.
  • j1.4 0.9.
  • j1.4 ZOL.
  • Ω 1.0.
  • j0.8 1.1.
  • j0.6 1.1.
  • j0.6 1.1.
  • j0.5 Zin = Complex co.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF1535FT1_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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MRF150 RF Power FET MA-COM
MRF151 RF Power Field-Effect Transistor MACOM
MRF151 N-CHANNEL BROADBAND RF POWER MOSFET Tyco Electronics

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF1535T1 RF Power Field Effect Transistors
MRF1535FNT1 RF Power Field Effect Transistors
MRF1535FT1 RF Power Field Effect Transistors
MRF1535FT1 RF Power Field Effect Transistors
MRF1535NT1 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1535T1/D The RF MOSFET Line RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 520 MHz, 12.5 Volts Output Power — 35 Watts Power Gain — 10.0 dB Efficiency — 50% • Capable of Handling 20:1 VSWR, @ 15.