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MRF1535NT1 - RF Power Field Effect Transistors

Download the MRF1535NT1 datasheet PDF. This datasheet also covers the MRF1535FNT1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Q = 250 mA Pin = 34 dBm 10 11 12 13 14 15 520 MHz 40 IDQ = 250 mA Pin = 34 dBm 10 11 12 13 14 15 VDD, SUPPLY.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF1535FNT1_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF1535FNT1 RF Power Field Effect Transistors
MRF1535FT1 RF Power Field Effect Transistors
MRF1535FT1 RF Power Field Effect Transistors
MRF1535T1 RF Power Field Effect Transistors
MRF1535T1 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
( DataSheet : www.DataSheet4U.com ) Freescale Semiconductor Technical Data MRF1535T1 Rev. 7, 3/2005 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices make them ideal for large−signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 520 MHz, 12.5 Volts Output Power — 35 Watts Power Gain — 10.0 dB Efficiency — 50% • Capable of Handling 20:1 VSWR, @ 15.