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MRF1518T1 - The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR

Key Features

  • , 2 oz. Copper Figure 19. 135.
  • 175 MHz Broadband Test Circuit.

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( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1518/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 520 MHz, 12.5 Volts D Output Power — 8 Watts Power Gain — 11 dB Efficiency — 55% • Capable of Handling 20:1 VSWR, @ 15.