Download MRF1002 Datasheet PDF
Motorola Semiconductor
MRF1002
MRF1002 is MICROWAVE POWER TRANSISTOR manufactured by Motorola Semiconductor.
MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1002MA/D Microwave Pulse Power Transistors . . . designed for Class B and C mon base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. - Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 d B - 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR - Industry Standard Package - Nitride Passivated - Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration - Internal Input Matching for Broadband Operation - Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current - Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Symbol RθJC Value 20 50 3.5 250 7.0 40 - 65 to +150 Unit Vdc Vdc Vdc m Adc Watts m W/°C °C MRF1002MA MRF1002MB 2.0 W (PEAK), 960 - 1215 MHz MICROWAVE POWER TRANSISTORS NPN SILICON CASE 332- 04, STYLE 1 MRF1002MA THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Max 25 Unit °C/W CASE 332A- 03, STYLE 1 MRF1002MB ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector- Emitter Breakdown Voltage (IC = 5.0 m Adc, IB = 0) Collector- Emitter Breakdown Voltage (IC = 5.0 m Adc, VBE = 0) Collector- Base Breakdown Voltage (IC = 5.0 m Adc, IE = 0) Emitter- Base Breakdown Voltage (IE = 1.0 m Adc, IC = 0) Collector Cutoff Current (VCB = 35 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 20 50 50 3.5 - - - - - - - - - - 0.5 Vdc Vdc Vdc Vdc m Adc ON CHARACTERISTICS DC Current Gain (IC = 100 m Adc, VCE = 5.0 Vdc) h FE 10 - 100 - NOTES: (continued) 1. These devices are designed for RF operation. The total device dissipation rating applies only when the...