MPS6530 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS6530/D Amplifier Transistor NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Symbol VCEO VCBO VEBO IC PD TJ, Tstg Value 40 60 5.0 600 625 150 Unit Vdc Vdc Vdc m Adc m W °C CASE 29- 04, STYLE 1 TO- 92 (TO- 226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Symbol Rq JA Max 0.2 Unit °C/m W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 10 m Adc, IB = 0) Collector - Base Breakdown Voltage (IC = 10 m Adc, IE = 0) Emitter - Base Breakdown Voltage (IB = 10 m Adc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0, TA = 60°C) V(BR)CEO V(BR)CBO V(BR)EBO ICBO - - 0.05 2.0 40 60 5.0 - - - Vdc Vdc Vdc m Adc REV 1 Motorola Small- Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 10 m Adc, VCE = 1.0 Vdc) (IC = 100 m Adc, VCE = 1.0 Vdc) (IC = 500 m Adc, VCE = 10 Vdc) Collector - Emitter Saturation Voltage (IC = 100 m Adc, IB = 10 m Adc) Base - Emitter Saturation Voltage (IC = 100 m Adc, IB = 10 m Adc) h FE 30 40 25 VCE(sat) VBE(sat) - - - 120 - 0.5 1.0 Vdc Vdc - SMALL- SIGNAL CHARACTERISTICS...