MPF102
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPF102/D
JFET VHF Amplifier
N- Channel
- Depletion
1 DRAIN 3 GATE
2 SOURCE
MAXIMUM RATINGS
Rating Drain
- Source Voltage Drain
- Gate Voltage Gate
- Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS IG PD TJ Tstg Value 25 25
- 25 10 350 2.8 125
- 65 to +150 Unit Vdc Vdc Vdc m Adc m W m W/°C °C °C
1 2 3
CASE 29- 04, STYLE 5 TO- 92 (TO- 226AA)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate
- Source Breakdown Voltage (IG =
- 10 µAdc, VDS = 0) Gate Reverse Current (VGS =
- 15 Vdc, VDS = 0) (VGS =
- 15 Vdc, VDS = 0, TA = 100°C) Gate
- Source Cutoff Voltage (VDS = 15 Vdc, ID = 2.0 n Adc) Gate
- Source Voltage (VDS = 15 Vdc, ID = 0.2 m Adc) V(BR)GSS IGSS
- - VGS(off) VGS
- - 0.5
- 2.0
- 2.0
- 8.0
- 7.5 n Adc µAdc Vdc Vdc
- 25
- Vdc
ON CHARACTERISTICS
Zero...
