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Motorola Electronic Components Datasheet

MMSF3P03HD Datasheet

SINGLE TMOS POWER FET 3.0 AMPERES 30 VOLTS

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSF3P03HD/D
Designer's Data Sheet
Medium Power Surface Mount Products
TMOS P-Channel
Field Effect Transistors
MiniMOSdevices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
G
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp 10 µs)
Total Power Dissipation @ TA = 25°C (2)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 14 mH, RG = 25 )
Thermal Resistance — Junction to Ambient (2)
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
DEVICE MARKING
D
S
MMSF3P03HD
Motorola Preferred Device
SINGLE TMOS POWER FET
3.0 AMPERES
30 VOLTS
RDS(on) = 0.1 OHM
CASE 751–05, Style 13
SO–8
N–C
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
Symbol
Value
VDSS
30
VDGR
30
VGS
± 20
ID 4.6
ID 3.0
IDM 50
PD 2.5
– 55 to 150
EAS
567
RθJA
TL
50
260
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
°C
mJ
°C/W
°C
S3P03
(1) Negative signs for P–Channel device omitted for clarity.
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided), 10 sec. max.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMSF3P03HDR2
13
12 mm embossed tape
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 5
© MMoototroorlao,lIancT. 1M99O6S Power MOSFET Transistor Device Data
1


Motorola Electronic Components Datasheet

MMSF3P03HD Datasheet

SINGLE TMOS POWER FET 3.0 AMPERES 30 VOLTS

No Preview Available !

MMSF3P03HD
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)(1)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS(2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS(3)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDS = 15 Vdc, ID = 3.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 )
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDS = 15 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
RG = 6.0 )
Gate Charge
(VDS = 24 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
Reverse Recovery Time
(IS = 3.0 Adc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
(1) Negative sign for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(3) Switching characteristics are independent of operating junction temperature.
trr
ta
tb
QRR
Min
30
1.0
3.0
Typ Max Unit
Vdc
——
30 — mV/°C
µAdc
— 1.0
— 10
5.0 100 nAdc
1.5
3.9
0.080
0.090
5.0
2.0
0.100
0.110
Vdc
mV/°C
Ohm
mhos
1015
470
135
1420
660
190
pF
26 52
102 204
67 134
69 138
14 28
32 64
104 208
66 132
32.4 45
2.7 —
9.0 —
6.9 —
ns
nC
1.3
0.85
31
22
9.0
0.034
2.0
Vdc
ns
µC
2 Motorola TMOS Power MOSFET Transistor Device Data


Part Number MMSF3P03HD
Description SINGLE TMOS POWER FET 3.0 AMPERES 30 VOLTS
Maker Motorola
Total Page 10 Pages
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