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Motorola Electronic Components Datasheet

MMSF3205 Datasheet

SINGLE TMOS POWER MOSFET 11 AMPERES 20 VOLTS

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Product Preview
Medium Power Surface Mount Products
TMOS Single P-Channel
Field Effect Transistors
MiniMOSdevices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process. These
miniature surface mount MOSFETs feature ultra low RDS(on) and true
logic level performance. They are capable of withstanding high energy in
the avalanche and commutation modes and the drain–to–source diode
has a very low reverse recovery time. MiniMOS devices are designed for
use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
G
Avalanche Energy Specified
Mounting Information for SO–8 Package Provided
Order this document
by MMSF3205/D
MMSF3205
Motorola Preferred Device
SINGLE TMOS
POWER MOSFET
11 AMPERES
20 VOLTS
RDS(on) = 0.015 OHM
D
S
CASE 751–06, Style 12
SO–8
Source
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
DEVICE MARKING
ORDERING INFORMATION
S3205
Device
MMSF3205R2
Reel Size
13
Tape Width
12 mm embossed tape
Quantity
4000 units
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
©MMoottoororolal,aInTc.M19O9S8 Power MOSFET Transistor Device Data
1


Motorola Electronic Components Datasheet

MMSF3205 Datasheet

SINGLE TMOS POWER MOSFET 11 AMPERES 20 VOLTS

No Preview Available !

MMSF3205
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Negative sign for P–Channel devices omitted for clarity
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M)
Gate–to–Source Voltage — Continuous
1 inch SQ.
FR–4 or G–10 PCB
10 seconds
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (1)
Minimum
FR–4 or G–10 PCB
10 seconds
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (1)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
W(VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 11 Apk, L = TBD mH, RG = 25 )
(1) Repetitive rating; pulse width limited by maximum junction temperature.
Symbol
VDSS
VDGR
VGS
RTHJA
PD
ID
ID
IDM
RTHJA
PD
ID
ID
IDM
TJ, Tstg
EAS
Max
20
20
± 12
50
2.5
20
11
8.0
55
80
1.56
12.5
8.6
6.4
43
– 55 to 150
TBD
Unit
V
V
V
°C/W
Watts
mW/°C
A
A
A
°C/W
Watts
mW/°C
A
A
A
°C
mJ
2 Motorola TMOS Power MOSFET Transistor Device Data


Part Number MMSF3205
Description SINGLE TMOS POWER MOSFET 11 AMPERES 20 VOLTS
Maker Motorola
Total Page 6 Pages
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