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MMSF2P02E - SINGLE TMOS POWER MOSFET

Features

  • 00 8 400 Crss Ciss Coss Crss 200 0 10 3 Q3 4 ID = 2 A TJ = 25°C 2 4 6 8 Qg, TOTAL GATE CHARGE (nC) 10 0 12 30 5 0 5 10 15 20 25 VGS VDS GATE.
  • TO.
  • SOURCE OR DRAIN.
  • TO.
  • SOURCE.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMSF2P02E/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMSF2P02E Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important.
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