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Motorola Electronic Components Datasheet

MMSF2P02E Datasheet

SINGLE TMOS POWER MOSFET 2.5 AMPERES 20 VOLTS

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSF2P02E/D
Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Single P-Channel
Field Effect Transistors
MiniMOSdevices are an advanced series of power MOSFETs
which utilize Motorola’s TMOS process. These miniature surface
mount MOSFETs feature ultra low RDS(on) and true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain–to–source diode
has a low reverse recovery time. MiniMOS devices are designed
for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dc–dc
converters, and power management in portable and battery
powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
G
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed
Avalanche Energy Specified
Mounting Information for SO–8 Package Provided
IDSS Specified at Elevated Temperature
MMSF2P02E
Motorola Preferred Device
SINGLE TMOS
POWER MOSFET
2.5 AMPERES
20 VOLTS
RDS(on) = 0.250 OHM
D
S
CASE 751–05, Style 13
SO–8
N–C
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C (2)
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp 10 µs)
Total Power Dissipation @ TA = 25°C(2)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 5.0 Vdc, IL = 6.0 Apk, L = 12 mH, RG = 25 )
Thermal Resistance — Junction to Ambient(2)
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
VDSS
VGS
ID
ID
IDM
PD
TJ, Tstg
EAS
20
± 20
2.5
1.7
13
2.5
– 55 to 150
216
Vdc
Vdc
Adc
Apk
Watts
°C
mJ
RθJA
TL
50 °C/W
260 °C
DEVICE MARKING
S2P02
(1) Negative sign for P–Channel device omitted for clarity.
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided), 10 sec. max.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMSF2P02ER2
13
12 mm embossed tape
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a registered trademark of Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
©MMoottoororolal,aInTc.M19O9S6 Power MOSFET Transistor Device Data
1


Motorola Electronic Components Datasheet

MMSF2P02E Datasheet

SINGLE TMOS POWER MOSFET 2.5 AMPERES 20 VOLTS

No Preview Available !

MMSF2P02E
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS(2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS(3)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 5.0 Vdc,
RG = 6.0 )
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 6.0 )
Gate Charge
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(2)
(IS = 2.0 Adc, VGS = 0 Vdc)
Reverse Recovery Time
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
(1) Negative sign for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(3) Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
Min
20
1.0
1.0
Typ
24.7
2.0
4.7
0.19
0.3
2.8
340
220
75
20
40
53
41
13
29
30
28
10
1.1
3.3
2.5
1.5
34
18
16
0.035
Max Unit
Vdc
— mV/°C
µAdc
1.0
10
100 nAdc
Vdc
3.0
— mV/°C
Ohm
0.25
0.4
— Mhos
475 pF
300
150
40 ns
80
106
82
26 ns
58
60
56
15 nC
2.0 Vdc
64 ns
µC
2 Motorola TMOS Power MOSFET Transistor Device Data


Part Number MMSF2P02E
Description SINGLE TMOS POWER MOSFET 2.5 AMPERES 20 VOLTS
Maker Motorola
Total Page 8 Pages
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