MMSF2P02E Datasheet | Motorola Semiconductor

feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and mutation modes and the drain- to- source diode has a low reverse recovery time. Mini MOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc- dc converters, and power management in portable and battery powered products such as puters, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. - - - - - - - - SINGLE TMOS POWER MOSFET 2.5 AMPERES 20 VOLTS RDS(on) = 0.250 OHM ™ CASE 751- 05, Style 13 SO- 8 Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive - Can Be Driven by Logic ICs Miniature SO- 8 Surface Mount Package - Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed Avalanche Energy Specified Mounting Information for SO- 8 Package Provided IDSS Specified at Elevated Temperature N- C Source Source Gate 1 2 3 4 8 7 6 5 Drain Drain Drain Drain Top View MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1) Rating Drain- to- Source Voltage Gate- to- Source Voltage - Continuous Drain Current - Continuous @ TA = 25°C (2) Drain Current - Continuous @ TA = 100°C Drain Current - Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C(2) Operating and Storage Temperature Range Single Pulse Drain- to- Source Avalanche Energy - Starting TJ = 25°C (VDD = 20 Vdc, VGS = 5.0 Vdc, IL = 6.0 Apk, L = 12 m H, RG = 25 Ω) Thermal Resistance - Junction to Ambient(2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VGS ID ID IDM PD TJ, Tstg EAS RθJA TL Value 20 ± 20...