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Motorola Electronic Components Datasheet

MMSF10N03Z Datasheet

SINGLE TMOS POWER MOSFET 10 AMPERES 30 VOLTS

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSF10N03Z/D
Advance Information
Medium Power Surface Mount Products
TMOS Single N-Channel with
MMSF10N03Z
Motorola Preferred Device
Monolithic Zener ESD Protected Gate
EZFETsare an advanced series of power MOSFETs which utilize
Motorola’s High Cell Density TMOS process and contain monolithic
back–to–back zener diodes. These zener diodes provide protection
against ESD and unexpected transients. These miniature surface mount
MOSFETs feature ultra low RDS(on) and true logic level performance. They
are capable of withstanding high energy in the avalanche and commuta-
tion modes and the drain–to–source diode has a very low reverse recovery
time. EZFET devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls in
mass storage products such as disk drives and tape drives.
Zener Protected Gates Provide Electrostatic Discharge Protection
Designed to Withstand 200 V Machine Model and 2000 V Human Body Model D
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
G
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
S
SINGLE TMOS
POWER MOSFET
10 AMPERES
30 VOLTS
RDS(on) = 13 mW
CASE 751–05, Style 12
SO–8
Source
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
Symbol
Max
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C (1)
Drain Current — Continuous @ TA = 70°C (1)
Drain Current — Pulsed Drain Current (3)
Total Power Dissipation @ TA = 25°C (1)
Linear Derating Factor @ TA = 25°C (1)
Total Power Dissipation @ TA = 25°C (2)
Linear Derating Factor @ TA = 25°C (2)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
W(VDD = 30 Vdc, VGS = 10 Vdc, IL = 10 Apk, L = 20 mH, RG = 25 )
THERMAL RESISTANCE
VDSS
VDGR
VGS
ID
ID
IDM
PD
PD
TJ, Tstg
EAS
30
30
± 20
10
7.7
50
2.5
20
1.6
12
– 55 to 150
1000
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
Watts
mW/°C
°C
mJ
Junction–to–Ambient (1)
Junction–to–Ambient (2)
Parameter
Symbol
RqJA
(1) When mounted on 1” square FR4 or G–10 board (VGS = 10 V, @ 10 seconds).
(2) When mounted on minimum recommended FR4 or G–10 board (VGS = 10 V, @ Steady State).
(3) Repetitive rating; pulse width limited by maximum junction temperature.
DEVICE MARKING
ORDERING INFORMATION
Typ
Max Unit
50 °C/W
80
S10N3Z
Device
MMSF10N03ZR2
Reel Size
13
Tape Width
12 mm embossed tape
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Quantity
2500 units
©MMoottoororolal,aInTc.M19O9S7 Power MOSFET Transistor Device Data
1


Motorola Electronic Components Datasheet

MMSF10N03Z Datasheet

SINGLE TMOS POWER MOSFET 10 AMPERES 30 VOLTS

No Preview Available !

MMSF10N03Z
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk 2.0) (1) (3) V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk 2.0) (1) (3)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
(Cpk 2.0) (1) (3)
Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc) (1)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 25 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc,
RG = 6.0 ) (1)
Gate Charge
See Figure 8
(VDS = 15 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc) (1)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 10 Adc, VGS = 0 Vdc) (1)
(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 2.3 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (1)
Reverse Recovery Stored Charge
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperatures.
(3) Reflects typical values.
Max limit – Typ
Cpk = 3 x SIGMA
IDSS
IGSS
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
Min
30
1.0
7.0
Typ Max Unit
Vdc
——
65 — mV/°C
µAdc
— 1.0
— 10
— 3.0 µAdc
Vdc
1.2 1.7
3.5 — mV/°C
m
10 13
13 18
13 — Mhos
720 1010
570 800
78 110
pF
35 70
105 210
970 1940
550 1100
46 64
3.8 —
11 —
8.1 —
ns
nC
0.80 1.1 Vdc
0.70 —
460 —
ns
180 —
280 —
4.2 — µC
2 Motorola TMOS Power MOSFET Transistor Device Data


Part Number MMSF10N03Z
Description SINGLE TMOS POWER MOSFET 10 AMPERES 30 VOLTS
Maker Motorola
Total Page 10 Pages
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