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Motorola Electronic Components Datasheet

MMSF10N02Z Datasheet

SINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTS

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSF10N02Z/D
Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Single N-Channel with
Monolithic Zener ESD
Protected Gate
EZFETsare an advanced series of power MOSFETs which
utilize Motorola’s High Cell Density HDTMOS process and contain
monolithic back–to–back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature low RDS(on) and true
logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
EZFET devices are designed for use in low voltage, high speed
switching applications where power efficiency is important.
Zener Protected Gates Provide Electrostatic Discharge Protection
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
G
MMSF10N02Z
Motorola Preferred Device
SINGLE TMOS
POWER MOSFET
10 AMPERES
20 VOLTS
RDS(on) = 0.015 OHM
D
S
CASE 751–05, Style 12
SO–8
Source
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Single Pulse (tp 10 µs)
Total Power Dissipation @ TA = 25°C (1)
Operating and Storage Temperature Range
Thermal Resistance — Junction to Ambient
Maximum Temperature for Soldering
(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 4.5 V, @ 10 Seconds)
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
RθJA
TL
Value
20
20
± 12
10
7.0
80
2.5
– 55 to 150
50
260
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
°C
°C/W
°C
DEVICE MARKING
ORDERING INFORMATION
10N02Z
Device
MMSF10N02ZR2
Reel Size
13
Tape Width
12 mm embossed tape
Quantity
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s, HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trade-
mark of the Bergquist Company.
REV 2
©MMoottoororolal,aInTc.M19O9S7 Power MOSFET Transistor Device Data
1


Motorola Electronic Components Datasheet

MMSF10N02Z Datasheet

SINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTS

No Preview Available !

MMSF10N02Z
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk 2.0)
(3)
V(BR)DSS
Vdc
20 — —
— 17 — mV/°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk 2.0)
(3)
IDSS
IGSS
VGS(th)
µAdc
— — 10
— — 100
— 0.6 1.5 µAdc
Vdc
0.5 0.72 1.1
— 2.86 — mV/°C
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 10 Adc)
(VGS = 2.7 Vdc, ID = 5.0 Adc)
(Cpk 2.0)
(3)
Forward Transconductance (VDS = 9.0 Vdc, ID = 5.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 10 Vdc, ID = 5.0 Adc,
VGS = 4.0 Vdc, RG = 10 )
Fall Time
Gate Charge
(VDS = 16 Vdc, ID = 10 Adc,
VGS = 4.0 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 10 Adc, VGS = 0 Vdc)
(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
m
— 13 15
— 16 19
11 14 — Mhos
1150
1225
pF
— 775 810
— 375 480
— 65 75 ns
— 360 440
— 325 640
— 575 860
— 26 32 nC
— 2.5 —
— 13 —
— 9.0 —
Vdc
— 0.83 1.2
— 0.68 —
Reverse Recovery Time
(IS = 10 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Storage Charge
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Max limit – Typ
Cpk = 3 x SIGMA
trr
ta
tb
QRR
— 765 —
ns
— 240 —
— 530 —
— 8.7 — µC
2 Motorola TMOS Power MOSFET Transistor Device Data


Part Number MMSF10N02Z
Description SINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTS
Maker Motorola
Total Page 10 Pages
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