MMSF10N02Z
feature low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and mutation modes and the drain- to- source diode has a very low reverse recovery time. EZFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important.
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SINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTS RDS(on) = 0.015 OHM
Zener Protected Gates Provide Electrostatic Discharge Protection Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive
- Can Be Driven by Logic ICs Miniature SO- 8 Surface Mount Package
- Saves Board Space Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Mounting Information for SO- 8 Package Provided
CASE 751- 05, Style 12 SO- 8
Source Source Source Gate
1 2 3 4
8 7 6 5
Drain Drain Drain Drain
Top View
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain- to- Source Voltage Drain- to- Gate Voltage...
