MMBTH69LT1
MMBTH69LT1 is UHF/VHF Transistor manufactured by Motorola Semiconductor.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBTH69LT1/D
UHF/VHF Transistor
COLLECTOR 3 1 BASE 2 EMITTER
Motorola Preferred Device
PNP Silicon
- Designed for UHF/VHF Amplifier Applications
- High Current Gain Bandwidth Product f T = 2000 MHz Min @ 10 m A
3 1 2
MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Symbol VCEO VCBO VEBO Value
- 15
- 15
- 4.0 Unit Vdc Vdc Vdc CASE 318
- 08, STYLE 6 SOT- 23 (TO
- 236AB)
DEVICE MARKING
MMBTH69LT1 = M3J
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417
- 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector- Emitter Breakdown Voltage (IC =
- 1.0 m Adc, IB = 0) Collector- Base Breakdown Voltage (IC =
- 10 µAdc, IE = 0) Emitter- Base Breakdown Voltage (IE =
- 10 µAdc, IC = 0) Collector Cutoff Current (VCB =
- 10 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO
- 15
- 15
- 4.0
- -
- -
- -
- -
- 100 Vdc Vdc Vdc n Adc
ON CHARACTERISTICS
DC Current Gain (IC...
