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MMBF5460LT1 - JFET General Purpose Transistor

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  • la products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other.

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MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF5460LT1/D JFET General Purpose Transistor P–Channel 3 GATE 2 SOURCE MMBF5460LT1 1 DRAIN 3 1 2 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current Symbol VDG VGSR IGF Value 40 40 10 Unit Vdc Vdc mAdc CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.
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