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MMBF4860 - FET SWITCHING TRANSISTOR

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MAXIMUM RATINGS Rating Dr ain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Symbol vDs vDg VGS(r) 'G(f) THERMAL CHARACTERISTICS Characteristic Symbol *Total Device Dissipation, TA = 25°C Derate above 25°C PD Storage Temperature 'stg Thermal Resistance Junction to Ambient Rsja •Package mounted on 99.5% alumina 10 x x 0.6 mm. Value Max 350 2.8 357 Unit vac Vdc Vdc mAdc Unit mW mW/X °c/w ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage G(l = 1.0 /xAdc, Vps = 0) Gate Reverse Current (Vqs = 15 Vdc, VDS (Vqs = 15 Vdc, Vps 0) 0,TA 150°C) Gate Source Cutoff Voltage (Vqs = I 5 Vdc, lp = 0.
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