The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2N869A(SILICON)
2N869A JAN/JANTX Available
MM869B
PNP SILICON ANNULAR TRANSISTORS
PNP silicon annular low-power transistor designed for mediumspeed, saturated switching applications.
• Collector-Emitter Breakdown Voltage -
= = BVCEO 30 Vdc (Min) @ IC 10 mAdc - MM869B
• Low Collector-Emitter Saturation Voltage VCE(sat) = 0.2 Vdc (Max) @ IC = 30 mAde
• Turn-On Time -
ton =10 ns (Typ) @IC =30 mAdc - MM869B
PNP SILICON SWITCHING TRANSISTORS
*MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC =25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
·2N869A JEOEC Registered Data.
MM869B Datasheet
