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MGP15N43CL - Internally Clamped N-Channel IGBT

Key Features

  • Gate.
  • Emitter ESD protection, Gate Collector Over.
  • Voltage Protection from monolithic circuitry for usage as an Ignition Coil Driver.
  • Temperature Compensated Gate.
  • Collector Clamp Limits Stress Applied to Load.
  • Integrated ESD Diode Protection.
  • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices.
  • Low Saturation Voltage.
  • High Pulsed Current Capability C Order this document by MGP15N43CL/D MGP15N43C.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate Collector Over– Voltage Protection from monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate – Collector Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices • Low Saturation Voltage • High Pulsed Current Capability C Order this document by MGP15N43CL/D MGP15N43CL 15 AMPERES N–CHANNEL IGBT VCE(on) = 1.