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MBR6045WT - SWITCHMODE Power Rectifier

Features

  • Dual Diode Construction.
  • Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating.
  • 45 Volt Blocking Voltage.
  • Low Forward Voltage Drop.
  • Guardring for Stress Protection and High dv/dt Capability (> 10 V/ns).
  • Guaranteed Reverse Avalanche.
  • 150°C Operating Junction Temperature Mechanical Characteristics.
  • Case: Epoxy, Molded.
  • Weight: 4.3 grams (approximately).
  • Finish: All External Surfaces Corro.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBR6045WT/D Advance Information SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage • Low Forward Voltage Drop • Guardring for Stress Protection and High dv/dt Capability (> 10 V/ns) • Guaranteed Reverse Avalanche • 150°C Operating Junction Temperature Mechanical Characteristics • Case: Epoxy, Molded • Weight: 4.
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