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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBR320/D
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes. • • • • Extremely Low vF Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Low Stored Charge, Majority Carrier Conduction
MBR320 MBR330 MBR340 MBR350 MBR360
MBR340 and MBR360 are Motorola Preferred Devices
Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.