The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBR2060CT/D
SWITCHMODE™ Power Rectifiers
. . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • • • • • • 20 Amps Total (10 Amps Per Diode Leg) Guard–Ring for Stress Protection Low Forward Voltage 150°C Operating Junction Temperature Guaranteed Reverse Avalanche Epoxy Meets UL94, VO at 1/8″ Low Power Loss/High Efficiency High Surge Capacity Low Stored Charge Majority Carrier Conduction
MBR2060CT MBR2070CT MBR2080CT MBR2090CT MBR20100CT
MBR2060CT and MBR20100CT are Motorola Preferred Devices
Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.
MBR2060CT Datasheet
