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BSW68A - NPN SILICON TRANSISTOR

Download the BSW68A datasheet PDF. This datasheet also covers the BSW66A variant, as both devices belong to the same npn silicon transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BSW66A-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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T BSW66A BSW67A BSW68A CASE 79, STYLE 1 TO-39 (TO-205AD) TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Symbol BSW BSW BSW 66A 67A 68A Collector-Emitter Voltage VCEO 100 120 150 Collector-Base Voltage VCBO 100 120 150 Emitter-Base Voltage Collector Current - Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C VEBO ic PD 6.0 2.0 0.8 4.57 @Total Device Dissipation Tc = 25°C Derate above 25°C pd 5.0 28.6 Operating and Storage Junction Temperature Range Tj. stg -65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction to Case Rgjc 35 Thermal Resistance, Junction to Ambient R#JA 220 Unit Vdc Vdc Vdc Amp Watt mW/°C Watt mW/°C °C Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
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