900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Motorola Electronic Components Datasheet

BCW60A Datasheet

GENERAL PURPOSE TRANSISTOR

No Preview Available !

BCW60A,B,C,D
MAXIMUM RATINGS
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
THERMAL CHARACTERISTICS
Symbol
vCEO
VCBO
vEBO
'C
Characteristic
'Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol
pd
Storage Temperature
Tstg
'Thermal Resistance Junction to Ambient
R 0JA
mmJ 'Package mounted on 99.5% alumina 10 x 8 x 0.6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
flC = 2.0 mAdc, lg = 0)
Emitter-Base Breakdown Voltage
(IE = 1.0 f(Adc, lc = 0)
Collector Cutoff Current
(VCE = 32 Vdc)
(VCE = 32 Vdc, TA = 150°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, lc = 0)
ON CHARACTERISTICS
DC Current Gain
dc = 10 ,uAdc, Vqe = 5.0 Vdc)
BCW60A
BCW60B
BCW60C
BCW60D
OC = 2.0 mAdc, Vqe = 5.0 Vdc)
BCW60A
BCW60B
BCW60C
BCW60D
dC = 50 mAdc, Vce = 1.0 Vdc)
BCW60A
BCW60B
BCW60C
BCW60D
dc = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Collector-Emitter Saturation Voltage
dC = 50 mAdc, Bl = 1.25 mAdc)
dC = 10 mAdc, Bl = 0.25 mAdc)
Base-Emitter Saturation Voltage
dC = 50 mAdc, Ib = 1.25 mAdc)
dC = 50 mAdc, Ib = 0.25 mAdc)
Base-Emitter On Voltage
dc = 2.0 mAdc, Vce = 5.0 Vdc)
BCW60A
BCW60B
BCW60C
BCW60D
Symbol
v (BR)CEO
v(BR)EBO
'GES
Min
32
'EBO
"FE
vCE(sat)
v BE(sat)
v BE(on)
20
40
.100
120
180
250
380
60
70
90
100
125
175
250
350
0.7
0.6
Value
32
32
5.0
100
Max
350
2.8
150
357
Max
20
20
20
220
310
460
630
250
350
500
700
0.55
0.35
1.05
0.85
0.75
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C
°C/W
Unit
Vdc
Vdc
nAdc
^iAdc
nAdc
Vdc
Vdc
Vdc
3-10


Motorola Electronic Components Datasheet

BCW60A Datasheet

GENERAL PURPOSE TRANSISTOR

No Preview Available !

BCW60A,B,C,D
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted
Characteristic
I
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
C(| = 10 mAdc, VcE = 5.0 Vdc, f = 1.0 MHz)
Output Capacitance
(Vce = 10 Vdc, lc = 0, f = 1.0 MHz)
Noise Figure
dC = 0.2 mAdc, Vqe = 5.0 Vdc, Rs = 2.0 kn,
BWf = 1.0 kHz,
= 200 Hz)
SWITCHING CHARACTERISTICS
Turn-On Time
c(l = 10 mAdc, Ibi = 10 mAdc)
Turn-Off Time
B2(l = 10 mAdc, V B B = 3.6 Vdc, Ri = R2 = 5.0 kO,
R L = 990 «)
"
Symbol
C bo
toff
Min
Max
Unit
pF
dB
3-11


Part Number BCW60A
Description GENERAL PURPOSE TRANSISTOR
Maker Motorola
Total Page 2 Pages
PDF Download

BCW60A Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 BCW60 NPN general purpose transistors
NXP
2 BCW60 NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)
Siemens Semiconductor Group
3 BCW60 NPN Silicon AF Transistors
Infineon Technologies AG
4 BCW60 Small Signal Transistors
Vishay
5 BCW60 NPN Silicon Epitaxial Planar Transistors
SEMTECH
6 BCW60 SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS
Zetex Semiconductors
7 BCW60A NPN EPITAXIAL SILICON TRANSISTOR
Samsung semiconductor
8 BCW60A NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)
Siemens Semiconductor Group
9 BCW60A NPN Silicon AF Transistors
Infineon Technologies AG





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy