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Motorola Electronic Components Datasheet

BC212 Datasheet

Amplifier PNP Transistors

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC212/D
Amplifier Transistors
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
BC BC BC
Symbol 212 213 214
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–50 –30 –30
–60 –45 –45
–5.0
–100
350
2.8
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0 Watts
8.0 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA 357 °C/W
Thermal Resistance, Junction to Case
RqJC
125
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
BC212
BC213
BC214
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = –10 mA, IE = 0)
BC212
BC213
BC214
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
BC212
BC213
BC214
V(BR)EBO
Collector–Emitter Leakage Current
(VCB = –30 V)
BC212
BC213
BC214
ICBO
Emitter–Base Leakage Current
(VEB = –4.0 V, IC = 0)
BC212
BC213
BC214
IEBO
Min
–50
–30
–30
–60
–45
–45
–5
–5
–5
BC212,B
BC213
BC214
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ Max Unit
— — Vdc
——
——
— — Vdc
——
——
— — Vdc
——
——
— –15 nAdc
— –15
— –15
— –15 nAdc
— –15
— –15
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1


Motorola Electronic Components Datasheet

BC212 Datasheet

Amplifier PNP Transistors

No Preview Available !

BC212,B BC213 BC214
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µAdc, VCE = –5.0 Vdc)
BC212
BC213
BC214
hFE
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
(IC = –100 mAdc, VCE = –5.0 Vdc)(1)
Collector – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –100 mAdc, IB = –5.0 mAdc)(1)
Base – Emitter Saturation Voltage
(IC = –100 mAdc, IB = –5.0 mAdc)
Base–Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
Common–Base Output Capacitance
(VCB = –10 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = –0.2 mAdc, VCE = –5.0 Vdc,
RS = 2.0 k, f = 1.0 kHz)
(IC = –0.2 mAdc, VCE = –5.0 Vdc,
RS = 2.0 k, f = 1.0 kHz, f = 200 Hz)
Small–Signal Current Gain
(IC = –2.0 mAdc, VCE = –5.0 Vdc, f = 1.0 kHz)
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
BC212
BC213
BC214
BC212, BC214
BC213
BC212
BC214
BC213
BC214
BC212, BC213
BC212
BC213
BC214
BC212B
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
NF
hfe
Min
40
40
100
60
80
140
–0.6
60
80
140
200
Typ Max
120
140
–0.10
–0.25
–1.0
–0.62
600
–0.6
–1.4
–0.72
280 —
320 —
360 —
— 6.0
—2
— 10
——
——
——
— 400
Unit
Vdc
Vdc
Vdc
MHz
pF
dB
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data



Part Number BC212
Description Amplifier PNP Transistors
Maker Motorola
Total Page 4 Pages
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BC212 Datasheet PDF





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