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4N38A - 6-Pin DIP Optoisolators

Download the 4N38A datasheet PDF. This datasheet also covers the 4N38 variant, as both devices belong to the same 6-pin dip optoisolators family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (4N38_MotorolaInc.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA GlobalOptoisolator™ 6-Pin DIP Optoisolators Transistor Output The 4N38 and 4N38A(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 80 Volt Collector–to–Emitter Breakdown ((BR)CEO)) Minimum • Meets or Exceeds All JEDEC Registered Specifications • To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option.