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2N703 - NPN Transistor

Download the 2N703 datasheet PDF. This datasheet also covers the 2N702 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N702-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N702 (SILICON) 2N703 CASE 22 (TO·18) NPN silicon annular transistors designed for lowlevel, high-speed switching applications. MAXIMUM RATINGS (T." 25'C unless otherwise noted) Rating Collector·Emitter Voltage Collector·aase Voltage Emitter·aase Voltage Collector Current Total Device Dissipation @TA = 25' C Derate above 25' C Total Device Dissipation @TC = 25' C Derate above 25' C Operating and Storage Junction Tem~_erature Range Symbol Value Unit VCEO 25 Vdc Vca 25 Vdc YEa 5.0 Vdc IC 50 mAdc PD PD Tstg 300 roW 2.0 mW/'C 600 mW 4.0 mW/'C .65 to ...175 'c ELECTRICAL CHARACTERISTICS (T." 25'C unless otherwise noted) Characteristic Symbol Min OFF CHARACTERISTICS Collector-Emitter areakdown Voltage (IC =2.0 mAde, la =0) Collector-a1/-..
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