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2N6305 - HIGH FREQUENCY TRANSISTOR

Download the 2N6305 datasheet PDF. This datasheet also covers the 2N6304 variant, as both devices belong to the same high frequency transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N6304-Motorola.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N6304 HIGH FREQUENCY TRANSISTOR
2N6338 NPN Transistor
2N6339 NPN Transistor
2N6340 NPN Transistor
2N6341 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (5 T"a = 25°C Derate above 25°C Storage Temperature Symbol VCEO VCBO VEBO ic pd Tstg Value 15 30 3.0 50 200 1.14 -65 to +200 Unit Vdc Vdc Vdc mAdc mW mW/X °C 2N6304 2N6305 CASE 20-03, STYLE 10 TO-72 (TO-206AF) HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, In. = 0) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, Ie = 0) Emitter-Base Breakdown Voltage E(l = 0.1 mAdc, Ic = 0) Collector Cutoff Current (Vcb = 5.0 Vdc, Ie = 0) ON CHARACTERISTICS DC Current Gain dC = 2.0 mAdc, Vqe = 5.
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