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2N4899 - Medium-power PNP silicon transistors

Download the 2N4899 datasheet PDF. This datasheet also covers the 2N4898 variant, as both devices belong to the same medium-power pnp silicon transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N4898-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N4898 thru 2N4900 (SILICON) ~~ CASE 80 CdP (TO·66) Medium-power PNP silicon transistors designed for driver circuits, switching, and amplifier applications. Complement to NPN 2N4910 thru 2N4912. Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous * Base Current Total Device Dissipation T C 25°C Derate above 25° C Operating & Storage Junction Temperature Range Symbol 2N4898 2N4899 2N4900 VCEO 40 60 80 VCB VEB IC* IB . 40 60 5.0 -1.0 .- 4 . 0 1.0 PD 25 0.143 r-- T J , T stg 65 to +200 80 , • · • • Unit Vdc Vdc Vdc Adc Adc Watts W/oC °c THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction to Case 8JC 7.0 Unit °C/W • The 1.