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2N4409 - AMPLIFIER TRANSISTOR

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor NPN Silicon 2N4410 COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 80 120 5.0 250 625 5.0 Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction to Ambient RqJA 200 Thermal Resistance, Junction to Case RqJC 83.